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A diode has ineternal body resistance and the extermal contact resistance.

The actual reverse saturation current of a commercially available diode will normally be measurably larger than that apperaing in the Shockley’s equation.

The contact area at the junction has a strong effect on the magnitude of the reverse saturation currnet.

The maximum reverse bias potential that can be applied before enetering the zener region is called the peak inverse voltage or PIV rating or peak reverse voltage or PRV rating.

At a fiuxes temperature the reverse saturation current of a diode increases with an increase in the reverse bias potential.

For commercially available diodes, for GaAs the reverse saturation current is typically about 1pA, compared to 10pA for Si and 1uA for Ge.

Breakdown voltages – Maximum GaAs, exceeds by 10% that Si devices which has 50V to 1kV. (However some Si Power Diodes have breakdown voltage 20kV). Ge typically has minimum breakdown voltage, having its maximum value 400V, generally less than 100V.

In the reverse bias region the reverse saturation current of a Si diode doubles for every 10 degree rise in temperature.